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Carbon nanotube transistors surpass silicon transistors in performance for the first time
Publish Time
2016/11/02
According to a recent report on the website of the University of Wisconsin-Madison, material scientists at the university have successfully developed a 1-inch carbon nanotube transistor that surpasses silicon and gallium arsenide transistors in performance for the first time. This breakthrough is a major milestone in the development of carbon nanotubes and will lead to their widespread use in logic circuits, high-speed wireless communication, and other semiconductor electronic devices. With a wall only one atom thick, carbon nanotubes are one of the best conductive materials and are considered the most promising next-generation transistor material.
The extremely small size of carbon nanotubes allows them to rapidly change the direction of current flowing through them, resulting in speeds five times faster than silicon transistors or energy consumption only one-fifth that of silicon transistors. Due to some insurmountable key technological challenges, the performance of carbon nanotube transistors has lagged far behind that of silicon and gallium arsenide transistors, preventing their use in computer chips and personal electronics. However, the latest carbon nanotube transistor achieves 1.9 times the current of silicon transistors, surpassing the performance of the currently highest-performing silicon transistors for the first time. A new research paper published in Science Advances details the work of a research team led by materials engineering professors Mike Arnold and Padma Gopalan. Carbon nanotubes often contain metal nanotubes, which can cause short circuits in electronic devices and damage the conductivity of carbon nanotubes. The research team used polymers to create unique conditions for removing metal nanotubes, ultimately reducing their content to less than 0.01%, resulting in almost ultra-pure carbon nanotubes. The team also developed a dissolution method to successfully remove residues generated during the manufacturing process of carbon nanotubes. Arnold stated: "Our research simultaneously overcame multiple obstacles facing carbon nanotubes, ultimately resulting in a 1-inch carbon nanotube transistor that surpasses the performance of silicon transistors for the first time. Many of the envisioned applications for carbon nanotubes remain to be realized, but we have finally achieved this after twenty years." (China Science and Technology Network)
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